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CHA2266
RoHS COMPLIANT
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC Description
VD 1 The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs PHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. VD 2
IN
OUT
Main Features
* * * * * * Broad band performance 12.5-17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.1mm
Typical on wafer measurements
( Vds = 4V, Ids = 130mA )
40 35 30 25 Gain & Return loss / dB 20 15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency / GHz 18 19 20 21 22 23 24 25
4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2
MS11
MS21
MS22
NF
Main Characteristics
Tamb=+25 C
Symbol
Fop G NF P1dB
Parameter
Operating frequency range Small signal gain Noise Figure Output power at 1 dB gain compression
Min
12.5 31
Typ
34 2.5 14.5
Max
17 3
Unit
GHz dB dB dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22667082- 23 Mar 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2266
Electrical Characteristics on wafer
Tamb = +25 Vd = 4V C, Symbol
Fop G G NF RLin RLout P1dB P3dB Id small signal Rth
12.5-17GHz Driver Amplifier
Parameter
Operating frequency range Small signal gain Small signal gain flatness Noise Figure Input return loss Output return loss Output power at 1 dB gain compression Saturated output power Drain bias current Thermal resistance @ Tback side=25 C
Min
12.5 31
Typ
Max
17
Unit
GHz dB dB
34 0.5 2.5 -10 -10 3.0 -6 -6
dB dB dB dBm
13.5 15
14.5 16 130 80 C 170
mA C/W
Absolute maximum Ratings (1)
Symbol
Vd Pin Tj max Top Tstg Drain bias voltage Maximum continuous input power overdrive Maximum peak input power overdrive(2) Maximum junction temperature Operating temperature range Storage temperature
Parameter
Values
4.3 -15 +15 175 -40 to +85 -55 to +125
Unit
V dBm dBm C C C
(1) Operation of this device above any of these parameters may cause permanent damage. (2) Duration <1s
Ref. : DSCHA22667082- 23 Mar 07
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2266
Typical Results
12.5-17 GHz Driver Amplifier
Typical Chip Response ( On wafer S-parameter*)
( Vds = 4V, Ids = 130mA )
40 35 30 25 Gain & Return loss / dB 20 15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency / GHz 18 19 20 21 22 23 24 25
4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2
MS11
MS21
MS22
NF
*Return loss improves with bondings. Typical On Wafer Scattering Parameters:
Tamb = +25 Bias Conditions: Vd = 4V C,
Freq/GHz 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 MS11 -0.19 -0.30 -0.46 -0.80 -1.44 -2.86 -6.63 -17.39 -18.06 -12.00 -9.86 -9.01 -8.27 -6.40 -5.55 -4.88 -4.83 -5.31 -5.85 -6.91 -7.45 PS11 -60.43 -74.26 -89.33 -106.32 -125.75 -151.22 177.56 153.85 -84.40 -98.21 -113.78 -121.29 -129.83 -139.02 -156.24 -174.36 166.53 149.22 132.80 118.54 103.68 MS12 -80.46 -78.78 -75.88 -72.20 -73.72 -66.33 -70.35 -66.55 -65.32 -59.86 -76.73 -56.32 -57.21 -62.54 -65.06 -67.73 -55.41 -53.79 -52.72 -50.50 -71.86 PS12 -28.08 -70.24 2.69 32.17 -51.84 -115.35 -76.43 -128.54 168.52 -136.83 168.29 80.85 -170.04 -89.64 53.72 -90.69 154.09 91.59 -168.14 80.81 -7.37
3/8
MS21 -9.27 -0.12 6.56 12.83 19.02 25.20 30.42 33.53 34.77 35.15 35.05 34.64 34.05 33.15 31.28 28.65 25.68 22.47 19.33 16.33 13.42
PS21 55.33 -24.96 -88.05 -142.23 165.74 108.42 42.05 -28.39 -94.85 -154.68 149.44 97.72 46.71 -4.88 -55.40 -101.56 -143.31 -179.42 148.56 119.70 93.05
MS22 -2.21 -2.68 -3.27 -4.19 -5.51 -7.08 -8.70 -9.87 -11.53 -12.46 -13.41 -12.58 -11.91 -11.24 -10.37 -9.43 -8.53 -7.66 -7.00 -6.35 -6.02
PS22 -70.44 -82.41 -95.03 -107.99 -118.06 -126.35 -131.49 -134.03 -135.84 -131.75 -127.10 -114.59 -113.66 -113.55 -116.41 -117.46 -120.11 -125.61 -131.61 -137.67 -145.44
NF
4.06 2.88 2.46 2.01 1.92 1.60 1.55 1.46 2.24
Ref. : DSCHA22667082- 23 Mar 07
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2266
Typical Test-Jig Results S- Parameters @ small signal
Tamb 25 Vd = 4V C,
40 35 30 25 20
12.5-17GHz Driver Amplifier
Gain, Return loss / dB
15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
S11
S21
S22
Frequency / GHz
S21 in the full temperature range
40 35 30 25 S21 (dB) -50 C 20 15 10 5 0 5 10 15 20 25 30 Frequency (GHz) 25 C +85 C
NF vs Frequency and Temperature
Ref. : DSCHA22667082- 23 Mar 07 4/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2266
12.5-17 GHz Driver Amplifier
NF in the full temperature range
6
5
4 NF (dB) -50 C 3 +25 C +85 C 2
1
0 10 11 12 13 14 15 16 17 18 Frequency (GHz)
Gain & Pout vs Pin @ 14, 15 and 16GHz
Tamb = 25 C,Vd =4 V
Gain / Pout @ 14GHz
40 18
38
16
36
Gain Pout Compression
14
34
12
32
10
30
8
28
6
26
4
24
2
22 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7
0
PIN (dBm)
Ref. : DSCHA22667082- 23 Mar 07
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Pout (dBm), compression (dB)
Gain (dB)
CHA2266
40
12.5-17GHz Driver Amplifier
Gain / Pout @ 15GHz
18
38
16
36
Gain Pout
14 Pout (dBm),compression (dB)
Pout (dBm), compression (dB)
34
Compression
12
Gain / dB
32
10
30
8
28
6
26
4
24
2
22 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 Pin / dBm
0
Gain / Pout @ 16GHz
40 18
38
16
36
Gain Pout
14
34
Compression
12
Gain / dB
32
10
30
8
28
6
26
4
24
2
22 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 Pin / dBm
0
Ref. : DSCHA22667082- 23 Mar 07
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2266
12.5-17 GHz Driver Amplifier
Psat #3dB 17 16 15
Output power (dBm)
14 13 12 11 10 9 8 7 -50 -25 0 25
Temperature ( C) 12GHz 14GHz 16GHz 18GHz
50
75
Pout @ 1dB compression 17 16 15
Output power (dBm)
14 13 12 11 10 9 8 7 -50 -25 0 25
Temperature ( C) 12GHz 14GHz 16GHz 18GHz
50
75
Ref. : DSCHA22667082- 23 Mar 07
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2266
Chip Assembly and Mechanical Data Drain supply feed 100 pF
12.5-17GHz Driver Amplifier
VD 1 IN
VD 2 OUT
Notes: Vd1 & Vd2 pads are internally connected Supply feed should be bypassed. 25m diameter gold wire is recommended
Bond pad positions and Pin references
(Chip thickness : 100 m. all dimensions are in micrometers)
Dimensions : 2320 x 1020m 35m
Ordering Information: CHA2266-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA22667082- 23 Mar 07
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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